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| Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) 3.0V @VGE = 15V, IC = 13A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 22 13 44 44 20 10 100 13 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 1.2 -- 40 -- Units C/W g (oz) Revision 0 C-45 To Order Previous Datasheet Index Next Data Sheet IRGPH30S Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, IC = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.5 -- V/C VGE = 0V, IC = 1.0mA -- 2.0 3.0 IC = 13A -- 2.8 -- V IC = 22A See Fig. 2, 5 -- 2.6 -- IC = 13A, TJ = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -12 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 3.1 6.3 -- S VCE = 100V, IC = 13A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, VCE = 1200V -- -- 1000 VGE = 0V, VCE = 1200V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. VCC=80%(VCES), VGE=20V, L=10H, RG= 23 Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 28 42 IC = 13A 8.2 12 nC VCC = 400V 6.8 10 VGE = 15V 28 -- TJ = 25C 22 -- ns IC = 13A, VCC = 960V 1200 1800 VGE = 15V, RG = 23 680 1140 Energy losses include "tail" 0.90 -- 12 -- mJ 13 19 26 -- TJ = 150C, 27 -- ns IC = 13A, VCC = 960V 1280 -- VGE = 15V, RG = 23 2000 -- Energy losses include "tail" 23 -- mJ 13 -- nH Measured 5mm from package 685 -- VGE = 0V 43 -- pF VCC = 30V 8.3 -- = 1.0MHz Refer to Section D - page D-13 Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-46 To Order |
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